| PART |
Description |
Maker |
| IRF1407L IRF1407S IRF1407STRR |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五（巴西）直| 100号A（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRL3803L IRL3803S |
Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）\u003d 0.006ohm，身份证\u003d律目140A?）
Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A?)
POWER MOSFET(VDSS=30V, RDS(ON)=0.006OHM, ID=140Aㄌ)
Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A)
Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A?
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF840S IRF840STRR IRF840STRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| 2SK2110 |
N-Channel MOSFET
Low on-resistance RDS(on)=1.5 MAX High switching speed Drain to source voltage VDSS 100
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| IRFP2907 IRFP2907PBF |
Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A?
Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A?)
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A)
75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
|
IRF[International Rectifier]
|
| IRF7342PBF IRF7342TRPBF IRF7342PBF-15 |
HEXFET? Power MOSFET (VDSS = -55V , RDS(on) = 0.105Ω)
HEXFET㈢ Power MOSFET (VDSS = -55V , RDS(on) = 0.105ヘ)
Generation V Technology
|
International Rectifier
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| IRFR5305PBF IRFU5305PBF IRFR5305TRPBF IRFR5305TR I |
Ultra Low On-Resistance
HEXFET㈢ Power MOSFET ( VDSS = -55V , RDS(on) = 0.065ヘ , ID = -31A )
HEXFET? Power MOSFET ( VDSS = -55V , RDS(on) = 0.065Ω , ID = -31A )
31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| IRF3703 IRF3703PBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
|
International Rectifier
|
